View APT75GT120JR_1168986.PDF datasheet online --- IC-ON-LINE

Datasheet File OCR Text:

TYPICAL PERFORMANCE CURVES (R)
APT75GT120JR 1200V
APT75GT120JR
Thunderbolt IGBT(R)
The Thunderblot IGBT(R) is a new generation of high voltage power IGBTs. Using Non- Punch Through Technology, the Thunderblot IGBT(R) offers superior ruggedness and ultrafast switching speed. * Low Forward Voltage Drop * Low Tail Current * RBSOA and SCSOA Rated * High Freq. Switching to 20KHz * Ultra Low Leakage Current
E G C
E
S
OT
22
7
ISOTOP (R)
"UL Recognized"
file # E145592
C G E
MAXIMUM RATINGS
Symbol VCES VGE I C1 I C2 I CM SSOA PD TJ,TSTG TL Parameter Collector-Emitter Voltage Gate-Emitter Voltage Continuous Collector Current @ TC = 25C Continuous Collector Current @ TC = 110C Pulsed Collector Current
1
All Ratings: TC = 25C unless otherwise specified.
APT75GT120JR UNIT Volts
1200 30 97 42 225 225A @ 1200V 481 -55 to 150 300
Amps
@ TC = 150C
Switching Safe Operating Area @ TJ = 150C Total Power Dissipation Operating and Storage Junction Temperature Range Max. Lead Temp. for Soldering: 0.063" from Case for 10 Sec.
Watts C
STATIC ELECTRICAL CHARACTERISTICS
Symbol V(BR)CES VGE(TH) VCE(ON) Characteristic / Test Conditions Collector-Emitter Breakdown Voltage (VGE = 0V, I C = 4mA) Gate Threshold Voltage (VCE = VGE, I C = 3mA, Tj = 25C) MIN TYP MAX Units
1200 4.5 2.7
2 2
5.5 3.2 3.9
6.5 3.7 25 TBD 480
Collector-Emitter On Voltage (VGE = 15V, I C = 75A, Tj = 25C) Collector-Emitter On Voltage (VGE = 15V, I C = 75A, Tj = 125C) Collector Cut-off Current (VCE = 1200V, VGE = 0V, Tj = 25C)
Volts
I CES I GES RG(int)
Gate-Emitter Leakage Current (VGE = 20V) Intergrated Gate Resistor
nA
CAUTION: These Devices are Sensitive to Electrostatic Discharge. Proper Handling Procedures Should Be Followed.
APT Website - http://www.advancedpower.com
052-6275
Rev B
5
10-2005
Collector Cut-off Current (VCE = 1200V, VGE = 0V, Tj = 125C)
A
DYNAMIC CHARACTERISTICS
Symbol Cies Coes Cres VGEP Qg Qge Qgc SSOA td(on) tr td(off) tf Eon1 Eon2 Eoff td(on) tr td(off) tf Eon1 Eon2 Eoff Characteristic Input Capacitance Output Capacitance Reverse Transfer Capacitance Gate-to-Emitter Plateau Voltage Total Gate Charge
3
APT75GT120JR
Test Conditions Capacitance VGE = 0V, VCE = 25V f = 1 MHz Gate Charge VCE = 600V I C = 75A TJ = 150C, R G = 4.3, VGE = Inductive Switching (25C) VCC = 800V VGE = 15V RG = 1.0 I C = 75A VGE = 15V MIN TYP MAX UNIT pF V nC
2570 250 155 7.5 240 15 110 225 50 65 375 25 8045 8845 2970 50 65 415 29 8050 12660 4215 J
ns A
Gate-Emitter Charge Gate-Collector ("Miller ") Charge Switching Safe Operating Area Turn-on Delay Time Current Rise Time Turn-off Delay Time Current Fall Time Turn-on Switching Energy Turn-off Switching Energy Turn-on Delay Time Current Rise Time Turn-off Delay Time Current Fall Time Turn-on Switching Energy Turn-off Switching Energy
44 55 4 5
15V, L = 100H,VCE = 1200V
ns
Turn-on Switching Energy (Diode)
6
TJ = +25C Inductive Switching (125C) VCC = 800V VGE = 15V RG = 1.0 I C = 75A
J
Turn-on Switching Energy (Diode)
66
TJ = +125C
THERMAL AND MECHANICAL CHARACTERISTICS
Symbol RJC RJC WT VIsolation Characteristic Junction to Case (IGBT) Junction to Case (DIODE) Package Weight RMS Voltage (50-60hHz Sinusoidal Waveform from Terminals to Mounting Base for 1 Min.) MIN TYP MAX UNIT C/W gm Volts
.26 N/A 29.2 2500
1 Repetitive Rating: Pulse width limited by maximum junction temperature. 2 For Combi devices, Ices includes both IGBT and FRED leakages 3 See MIL-STD-750 Method 3471. 4 Eon1 adding to the IGBT turn-on loss. Tested in inductive switching test circuit shown in figure 21, but with a Silicon Carbide diode. 5 Eon2 is loss. (See Figures 21, 22.)
10-2005
6 Eoff is the clamped inductive turn-off energy measured in accordance with JEDEC standard JESD24-1. (See Figures 21, 23.)
APT Reserves the right to change, without notice, the specifications and information contained herein.
052-6275
Rev B
TYPICAL PERFORMANCE CURVES
200 180 IC, COLLECTOR CURRENT (A) 160 140 120 100 80 60 40 20 0
V
GE
= 15V
140 120 100 80 60 40 20 0
APT75GT120JR
15V
TC = 25C
TC = 125C
IC, COLLECTOR CURRENT (A)
13V
12V
11V
10V
9V 8V
7V
200 180 IC, COLLECTOR CURRENT (A) 160 140 120 100
FIGURE 1, Output Characteristics(VGE = 15V)
VGE, GATE-TO-EMITTER VOLTAGE (V)
250s PULSE TEST<0.5 % DUTY CYCLE
0 1 2 3 4 5 6 7 VCE, COLLECTER-TO-EMITTER VOLTAGE (V)
TJ = -55C
16 14 12 10
FIGURE 2, Output Characteristics (TJ = 125C)
I = 75A C T = 25C
J
0 5 10 15 20 VCE, COLLECTER-TO-EMITTER VOLTAGE (V)
VCE = 120V VCE = 300V
8 6 4 2 0
80 60 40 20 0
VCE = 480V
TJ = 25C
TJ = 125C
0
2 4 6 8 10 12 14 VGE, GATE-TO-EMITTER VOLTAGE (V)
FIGURE 3, Transfer Characteristics
VCE, COLLECTOR-TO-EMITTER VOLTAGE (V)
0
50
100 150 200 GATE CHARGE (nC)
FIGURE 4, Gate Charge
250
VCE, COLLECTOR-TO-EMITTER VOLTAGE (V)
8.0 7.0 6.0 5.0 4.0 3.0 2.0 1.0
TJ = 25C. 250s PULSE TEST <0.5 % DUTY CYCLE
6
IC = 150A
IC = 150A
5 4 3 2 1 0
IC = 75A IC = 37.5A
IC = 75A
IC = 37.5A
10 12 14 16 VGE, GATE-TO-EMITTER VOLTAGE (V) FIGURE 5, On State Voltage vs Gate-to- Emitter Voltage
1.10
0
VGE = 15V. 250s PULSE TEST <0.5 % DUTY CYCLE
8
25 50 75 100 125 150 TJ, Junction Temperature (C) FIGURE 6, On State Voltage vs Junction Temperature
140
0
1.00 0.95 0.90 0.85 0.80 0.75 -50 -25 0 25 50 75 100 125 150 TJ, JUNCTION TEMPERATURE (C) FIGURE 7, Threshold Voltage vs. Junction Temperature
IC, DC COLLECTOR CURRENT(A)
VGS(TH), THRESHOLD VOLTAGE
1.05
120 100 80 60 40 20 0 -50 -25 0 25 50 75 100 125 150 TC, CASE TEMPERATURE (C) FIGURE 8, DC Collector Current vs Case Temperature 10-2005 052-6275 Rev B
(NORMALIZED)
60 50 40 30 20 10 T = 25C, or 125C J
160 130 100 70 40 10 ICE, COLLECTOR TO EMITTER CURRENT (A) FIGURE 9, Turn-On Delay Time vs Collector Current
VCE = 400V RG = 1.0 L = 100H
500
APT75GT120JR
td (OFF), TURN-OFF DELAY TIME (ns)
td(ON), TURN-ON DELAY TIME (ns)
400
VGE =15V,TJ=25C
VGE = 15V
300
VGE =15V,TJ=125C
200
100
0
160 130 100 70 40 10 ICE, COLLECTOR TO EMITTER CURRENT (A) FIGURE 10, Turn-Off Delay Time vs Collector Current
70 60 50 40 30 20 10
TJ = 125C, VGE = 15V
RG = 1.0, L = 100H, VCE = 400V
0
VCE = 400V RG = 1.0 L = 100H
160 140 120 100 80 60 40 20 0
RG = 1.0, L = 100H, VCE = 400V
tf, FALL TIME (ns)
tr, RISE TIME (ns)
TJ = 25 or 125C,VGE = 15V
TJ = 25C, VGE = 15V
160 130 100 70 40 10 ICE, COLLECTOR TO EMITTER CURRENT (A) FIGURE 11, Current Rise Time vs Collector Current
160 130 100 70 40 10 ICE, COLLECTOR TO EMITTER CURRENT (A) FIGURE 12, Current Fall Time vs Collector Current
10000
0
50000 EON2, TURN ON ENERGY LOSS (J)
EOFF, TURN OFF ENERGY LOSS (J)
V = 400V CE V = +15V GE R = 1.0
G
V = 400V CE V = +15V GE R = 1.0
G
40000
TJ = 125C
8000
TJ = 125C
30000
6000
20000
4000
10000
TJ = 25C
2000
TJ = 25C
160 130 100 70 40 10 ICE, COLLECTOR TO EMITTER CURRENT (A) FIGURE 13, Turn-On Energy Loss vs Collector Current
0
160 130 100 70 40 10 ICE, COLLECTOR TO EMITTER CURRENT (A) FIGURE 14, Turn Off Energy Loss vs Collector Current
45000
= 400V V CE = +15V V GE R = 1.0
G
0
100000 SWITCHING ENERGY LOSSES (J)
J
80000
Eon2,150A
SWITCHING ENERGY LOSSES (J)
= 400V V CE = +15V V GE T = 125C
40000 35000 30000 25000 20000 15000 10000 5000 0
Eon2,150A
60000
40000
10-2005
Eoff,150A Eon2,75A Eoff,75A Eon2,37.5A
Eon2,75A Eon2,37.5A Eoff,37.5A
20000
Eoff,37.5A
Eoff,150A Eoff,75A
Rev B
052-6275
50 40 30 20 10 RG, GATE RESISTANCE (OHMS) FIGURE 15, Switching Energy Losses vs. Gate Resistance 0
0
125 100 75 50 25 TJ, JUNCTION TEMPERATURE (C) FIGURE 16, Switching Energy Losses vs Junction Temperature 0
TYPICAL PERFORMANCE CURVES
Cies IC, COLLECTOR CURRENT (A)
250
APT75GT120JR
200
C, CAPACITANCE ( F)
P
150
100
Coes Cres 0 10 20 30 40 50 VCE, COLLECTOR-TO-EMITTER VOLTAGE (VOLTS) Figure 17, Capacitance vs Collector-To-Emitter Voltage
50
0 200 400 600 800 1000 1200 1400 VCE, COLLECTOR TO EMITTER VOLTAGE Figure 18,Minimim Switching Safe Operating Area
0
0.30 0.25 0.20 0.15 0.10 0.05 0
ZJC, THERMAL IMPEDANCE (C/W)
D = 0.9 0.7
0.5
Note:
PDM
0.3 0.1 0.05 10-5 10-4
t1 t2
SINGLE PULSE
Duty Factor D = 1/t2 Peak TJ = PDM x ZJC + TC
t
10-3 10-2 10-1 1.0 RECTANGULAR PULSE DURATION (SECONDS) Figure 19a, Maximum Effective Transient Thermal Impedance, Junction-To-Case vs Pulse Duration
10
50
RC MODEL
Junction temp. (C)
0.0594
0.0254
FMAX, OPERATING FREQUENCY (kHz)
F
10 5
T = 125C J T = 75C C D = 50 % V = 400V CE R = 5
G
Power (watts)
0.158
0.496
= min (fmax, fmax2) 0.05 fmax1 = td(on) + tr + td(off) + tf
max
fmax2 = Pdiss =
Pdiss - Pcond Eon2 + Eoff TJ - TC RJC
0.0436 Case temperature. (C)
11.6
Figure 19b, TRANSIENT THERMAL IMPEDANCE MODEL
25 35 45 55 65 75 IC, COLLECTOR CURRENT (A) Figure 20, Operating Frequency vs Collector Current
3
15
052-6275
Rev B
10-2005
APT75GT120JR
APT60DQ120
10% td(on)
Gate Voltage TJ = 125C
V CC
IC
V CE
tr
Collector Current 90% 10% 5% CollectorVoltage
5%
A D.U.T.
Switching Energy
Figure 21, Inductive Switching Test Circuit Figure 22, Turn-on Switching Waveforms and Definitions
90% Gate Voltage
TJ = 125C
td(off) CollectorVoltage 90% tf 10%
0
Collector Current
Switching Energy
Figure 23, Turn-off Switching Waveforms and Definitions
SOT-227 (ISOTOP(R)) Package Outline
31.5 (1.240) 31.7 (1.248)
7.8 (.307) 8.2 (.322)
W=4.1 (.161) W=4.3 (.169) H=4.8 (.187) H=4.9 (.193) (4 places)
11.8 (.463) 12.2 (.480)
8.9 (.350) 9.6 (.378) Hex Nut M4 (4 places)
r = 4.0 (.157) (2 places)
4.0 (.157) 4.2 (.165) (2 places)
25.2 (0.992) 0.75 (.030) 12.6 (.496) 25.4 (1.000) 0.85 (.033) 12.8 (.504)
3.3 (.129) 3.6 (.143)
1.95 (.077) 2.14 (.084)
14.9 (.587) 15.1 (.594)
* Emitter
Collector
* Emitter terminals are shorted internally. Current handling capability is equal for either Source terminal.
10-2005
30.1 (1.185) 30.3 (1.193)
38.0 (1.496) 38.2 (1.504)
Rev B
* Emitter
Gate
052-6275
Dimensions in Millimeters and (Inches)
ISOTOP(R) is a Registered Trademark of SGS Thomson. ,019,522 ,182,234 5 ,089,434 5 ,045,903 5 APT's products are covered by one or more of U.S.patents 4,895,810 5 5,262,336 6 ll ,528,058 and foreign patents. US and Foreign patents pending. A Rights Reserved. ,434,095 5 ,231,474 5 ,283,202 5 ,748,103 5 ,256,583 4 ,503,786 5

▲Up To Search▲

Price & Availability of APT75GT120JR

	To Download APT75GT120JR Datasheet File
If you can't view the Datasheet, Please click here to try to view without PDF Reader .